advanced power n-channel enhancement mode electronics corp. power mosfet lower on- resistance bv dss 30v simple drive requirement r ds(on) 4m fast switching characteristic i d 75a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.3 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice 200802183 1 AP90T03GS rohs-compliant product parameter rating drain-source voltage 30 gate-source voltage 20 continuous drain current, v gs @10v 3 75 continuous drain current, v gs @10v 63 pulsed drain current 1 350 total power dissipation 96 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.7 thermal data parameter storage temperature range g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-263 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s to-263(s)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =45a - - 4 m v gs =4.5v, i d =30a - - 6 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.8 - 3 v g fs forward transconductance v ds =10v, i d =30a - 55 - s i dss drain-source leakage current v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =24v ,v gs =0v - - 25 ua i gss gate-source leakage v gs = 20v - - 100 na q g total gate charge 2 i d =40a - 60 96 nc q gs gate-source charge v ds =24v - 8.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 38 - nc t d(on) turn-on delay time 2 v ds =15v - 14 - ns t r rise time i d =30a - 83 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 66 - ns t f fall time r d =0.5 - 120 - ns c iss input capacitance v gs =0v - 4090 6540 pf c oss output capacitance v ds =25v - 1010 - pf c rss reverse transfer capacitance f=1.0mhz - 890 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =45a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =30a, v gs =0v, - 51 - ns q rr reverse recovery charge di/dt=100a/s - 63 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is 75a, calculated continuous current based on maximum allowable junction temperature is 125a. this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. 2 this product has been qualified for consumer market. applications or uses as criterial component in life support AP90T03GS
AP90T03GS fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 120 140 160 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o 10v 7.0v 5.0v 4.5v v g =3.0v 0 5 10 15 20 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v sd , source-to-drain voltage (v) is (a) t j =25 o t j =150 o 0 40 80 120 160 200 0123 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o 10v 7.0v 5.0v 4.5v v g =3.0v 0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =45 a 0 0.5 1 1.5 2 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v) 3.0 4.0 5.0 6.0 246810 v gs , gate-to-source voltage (v) r ds(on) (m ?
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP90T03GS t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 100 1000 10000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =15v v ds =20v v ds =24v i d =40 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g l e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
package outline : to-263 millimeters min nom max a 4.25 4.75 5.20 a1 0.00 0.15 0.30 a2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 c1 1.15 1.30 1.45 d 8.30 8.90 9.40 e 9.70 10.10 10.50 e 2.04 2.54 3.04 l2 ----- 1.50 ----- l3 4.50 4.90 5.30 l4 ----- 1.50 ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-263 symbols advanced power electronics corp. package code part numbe r e b b1 e d l2 l3 c1 a a1 l4 c xxxxxs ywwsss a2 y last digit of the year ww week sss sequence package code part numbe r 90t03gs ywwsss logo e b b1 e d l2 l3 c1 a a1 l4 c a2 date code (ywwsss) y last digit of the year ww week sss sequence meet rohs requirement 5
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